BFP420 E6327

The BFP420 E6327 is a type of NPN silicon RF transistor which has many unique features: (1)For high gain low noise amplifiers;(2)For oscillators up to 10 GHz;(3)Noise figure F is 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz;(4)transition frequency fT is 25 GHz;(5)Gold metalization for high reliability,etc.

There are some maximum ratings of BFP420 E6327 about it.Collector-emitter voltage(VCEO) is 4.5 V.Collector-base voltage(VCBO) is 15 V.Emitter-base voltage(VEBO) is 1.5 V.Collector current(IC) is 35 mA.Base current(IB) is 3 mA.Total power dissipation(Ptot,TS is not higher than 75°C) is 160 mW.Junction temperature(Tj) is 150°C.Ambient temperature(TA) is -65°C to 150°C.Storage temperature(Tstg) is -65°C to 150°C.

Besides,there are some DC characteristics of BFP420 E6327 at TA = 25°C, unless otherwise specified.(1)collector-emitter breakdown voltage(V(BR)CEO,IC = 1 mA, IB = 0) is 4.5 V min,5 V typ and 6.5 V max.(2)collector-base cutoff current(ICBO,VEB = 0.5 V, Ic = 0) is 200 nA max.(3)emitter-base cutoff current(IEBO,VEB = 0.5 V, IC = 0) is 35 A max.(4)DC current gain(hFE,Ic is 40 mA , Vce is 3 V) is 50 min,80 typ and 150 max.