BFG591

Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment.

Note to the Limiting values and Thermal characteristics
1. T_s is the temperature at the soldering point of the collector pin.

The BFG591 is designed as one kind of NPN 7 GHz wideband transistor which intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment.It has some features such as:(1)high power gain;(2)low noise figure;(3)high transition frequency;(4)gold metallization ensures excellent reliability.

The quick reference data of the BFG591 can be summarized as:(1)collector-base voltage:20 V;(2)collector-emitter voltage:15 V;(3)collector current (DC):200 mA;(4)total power dissipation:2 W;(5)DC current gain:60 to 250;(6)feedback capacitance:0.7 pF;(7)transition frequency:7 GHz;(8)maximum unilateral power gain:13 dB;(9)insertion power gain:12 dB;(10)thermal resistance from junction to soldering point:35 K/W.

Also BFG591 are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.