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BFG590W/X

Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.Application· MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range· Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or...

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BFG590W/X: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.Application· MATV/CATV amplifiers and RF communications subscriber equipmen...

BFG590W/X Data Sheet

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Part Number:
BFG590W/X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.


Application

· MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range
· Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
15
V
VEBO emitter-base voltage
open collector
-
3
V
IC collector current (DC)
-
200
mA
Ptot total power dissipation
Ts 85 °C; see Fig.2; note 1
-
500
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
175
°C

Note
1. Ts is the temperature at the soldering point of the collector pin.


Description

NPN silicon planar epitaxial transistor BFG590W/X in a 4-pin dual-emitter SOT343N plastic package.


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