BFG590W Selling Leads, Price trend, BFG590W DataSheet download, circuit diagram from SeekIC.com

Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.Application· MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range· Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or...

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SeekIC No. : 004299681 Detail

BFG590W: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.Application· MATV/CATV amplifiers and RF communications subscriber equipmen...

BFG590W Data Sheet

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Part Number:: BFG590W
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/20

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Product Details

Description

Features:

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.

Application

· MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range
· Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	20	v
V_CEO	collector-emitter voltage	open base	-	15	v
V_EBO	emitter-base voltage	open collector	-	3	v
I_C	collector currentDC		-	200	mA
P_tot	total power dissipation	T_s 85 °C; see Fig.2; note 1	-	500	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	175	°C

Note
1. Ts is the temperature at the soldering point of the collector pin.

Description

NPN silicon planar epitaxial transistor BFG590W in a 4-pin dual-emitter SOT343N plastic package.

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BFG590W

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