Features: · High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.Pinout
Specifications
| SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
| VCBO |
collector-base voltage |
open emitter |
- |
- |
20 |
V |
| VCES |
collector-emitter voltage |
RBE = 0 |
- |
- |
15 |
V |
| IC |
DC collector current |
|
- |
- |
120 |
mA |
| Ptot |
total power dissipation |
Ts 60 °C; note 1 |
- |
- |
650 |
mW |
| hFE |
DC current gain |
IC = 40 mA; VCE = 8 V; Tj = 25 °C |
100 |
120 |
250 |
|
| Cre |
feedback capacitance |
IC = 0; VCE = 8 V; f = 1 MHz |
- |
0.7 |
- |
pF |
| fT |
transition frequency |
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C |
- |
9 |
- |
GHz |
| GUM |
maximum unilateral power gain |
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C |
- |
15 |
- |
dB |
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C |
- |
9 |
- |
dB |
| |s21|2 |
insertion power gain |
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C |
15 |
14 |
- |
dB |
| F |
noise figure |
Gs = Gopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C |
- |
1.3 |
1.8 |
dB |
| PL1 |
output power at 1 dB gain
compression |
IC = 40 mA; VCE = 8 V; RL = 50 ;
f = 900 MHz; Tamb = 25 °C |
- |
21 |
- |
dB |
| ITO |
third order intercept point |
IC = 40 mA; VCE = 8 V; RL = 50 ;
f = 900 MHz; Tamb = 25 °C |
- |
34 |
- |
dB |
DescriptionNPN silicon planar epitaxial transistor BFG541 , intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.
The transistors BFG541 are mounted in a plastic SOT223 envelope.
The BFG541 is a NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.
Features of the BFG541 are:(1)high power gain;(2)low noise figure;(3)high transition frequency;(4)gold metallization ensures excellent reliability.
The limiting avlues of the BFG541 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the rating is 20,the unit is V;(2):the symbol is VCES,the parameter is collector-emitter voltage,the rating is 15,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the rating is 2.5,the unit is V;(4):the symbol is IC,the parameter is DC collector current,the rating is 120,the unit is mA;(5):the symbol is Ptot,the parameter is total power dissipation,the rating is 650,the unit is mW;(6):the symbol is Tstg,the parameter is storage temperature,the rating is -65 to 150,the unit is ;(7):the symbol is Tj,the parameter is junction temperature,the rating is 175,the unit is .
BFG541 Data Sheet
