Position: Home  > All Categories> Integrated Circuits (ICs) > BFG540/XR

BFG540/XR

Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 20 V VCES collector-e...

product image

BFG540/XR Picture
See larger image
SeekIC No. : 004299674 Detail

BFG540/XR: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. TYP. ...

BFG540/XR Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
BFG540/XR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.


Pinout

Connection Diagram Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO collector-base voltage open emitter
-
-
20
V
VCES collector-emitter voltage RBE = 0
-
-
15
V
IC DC collector current  
-
-
120
mA
Ptot total power dissipation Ts 60 °C; note 1
-
-
400
mW
hFE DC current gain IC = 40 mA; VCE = 8 V; Tj = 25 °C
100
120
250
Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz
-
0.5
-
pF
fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
-
9
-
GHz
GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
-
18
-
dB
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
-
11
-
dB
|s21|2 insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
15
16
-
dB
F noise figure Gs = Gopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
-
1.3
1.8
dB
Gs = Gopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
-
1.9
2.4
dB
Gs = Gopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
-
2.1
-
dB



Description

NPN silicon planar epitaxial transistors BFG540/XR , intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems.

The transistors BFG540/XR are mounted in plastic SOT143B and SOT143R packages.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Resistors
A101G
3006P-1-205LF
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Optical Inspection Equipment
AA924
A21K4B
Discrete Semiconductor Products
T508N12TOF
MUR20040
Circuit Protection
A50QS75-4Y
F-17*77
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
View more