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BFG540W

Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.ApplicationRF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detector...

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SeekIC No. : 004299675 Detail

BFG540W: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.ApplicationRF front end wideband applications in the GHz range, such as ana...

BFG540W Data Sheet

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Part Number:
BFG540W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.


Application

RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless
   telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV
   amplifiers and repeater amplifiers in fibre-optic systems.


Pinout

Connection Diagram Connection Diagram Connection Diagram


Description

NPN silicon planar epitaxial transistors BFG540W in 4-pin dual-emitter SOT343N and SOT343R plastic packages.


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