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BF512

PinoutSpecifications Drain-source voltage VDS max. 20 V Drain-gate voltage (open source) VDGO max. 20 V Drain current (DC or average) ID max. 30 mA Gate current ± IG max. 10 mA Total power dissipation up to Tamb =40 Ptot max. 250 mW Storage temperature rang...

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SeekIC No. : 004299502 Detail

BF512: PinoutSpecifications Drain-source voltage VDS max. 20 V Drain-gate voltage (open source) VDGO max. 20 V Drain current (DC or average) ID max. 30 mA Gate current ± IG max....

BF512 Data Sheet

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Part Number:
BF512
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Pinout

Connection Diagram Connection Diagram


Specifications

Drain-source voltage VDS max. 20 V
Drain-gate voltage (open source) VDGO max. 20 V
Drain current (DC or average) ID max. 30 mA
Gate current ± IG max. 10 mA
Total power dissipation up to Tamb =40 Ptot max. 250 mW
Storage temperature range Tstg −65 to + 150
Junction temperature Tj max.  



Description

Asymmetrical N-channel planar epitaxial junction field-effect transistors BF512 in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513).


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