BF510

Pinout




Specifications

Drain-source voltage	VDS	max.	20	V
Drain-gate voltage (open source)	VDGO	max.	20	V
Drain current (DC or average)	ID	max.	30	mA
Gate current	± IG	max.	10	mA
Total power dissipation up to Tamb =40	Ptot	max.	250	mW
Storage temperature range	Tstg	−65 to + 150
Junction temperature	Tj	max.

Description

Asymmetrical N-channel planar epitaxial junction field-effect transistors BF510 in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513).