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PinoutSpecifications Drain-source voltage VDS max. 20 V Drain-gate voltage (open source) VDGO max. 20 V Drain current (DC or average) ID max. 30 mA Gate current ± IG max. 10 mA Total power dissipation up to Tamb =40 Ptot max. 250 mW Storage temperature rang...

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SeekIC No. : 004299501 Detail

BF511: PinoutSpecifications Drain-source voltage VDS max. 20 V Drain-gate voltage (open source) VDGO max. 20 V Drain current (DC or average) ID max. 30 mA Gate current ± IG max....

BF511 Data Sheet

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Part Number:: BF511
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/12/25

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Product Details

Description

Pinout

Connection Diagram

Specifications

Drain-source voltage	V_DS	max.	20	V
Drain-gate voltage (open source)	V_DGO	max.	20	V
Drain current (DC or average)	I_D	max.	30	mA
Gate current	± I_G	max.	10	mA
Total power dissipation up to T_amb=40	P_tot	max.	250	mW
Storage temperature range	T_stg	−65 to + 150
Junction temperature	T_j	max.

Description

Asymmetrical N-channel planar epitaxial junction field-effect transistors BF511 in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513).

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BF511

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