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BF199_J35Z

Transistors RF Bipolar Small Signal NPN RF-IF AMPLIFIER

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SeekIC No. : 00218789 Detail

BF199_J35Z: Transistors RF Bipolar Small Signal NPN RF-IF AMPLIFIER

BF199_J35Z Data Sheet

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Part Number:
BF199_J35Z
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Maximum Operating Frequency : 1100 MHz Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : 4 V Continuous Collector Current : 0.05 A
Power Dissipation : 350 mW Maximum Operating Temperature : + 150 C
Package / Case : TO-92 Packaging : Bulk    

Description

Configuration : Single
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Maximum Operating Frequency : 1100 MHz
Package / Case : TO-92
Packaging : Bulk
Continuous Collector Current : 0.05 A
Emitter- Base Voltage VEBO : 4 V
Collector- Emitter Voltage VCEO Max : 25 V
Power Dissipation : 350 mW


Parameters:

Technical/Catalog InformationBF199_J35Z
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Frequency - Transition1.1GHz
Noise Figure (dB Typ @ f)-
Current - Collector (Ic) (Max)50mA
DC Current Gain (hFE) (Min) @ Ic, Vce38 @ 7mA, 10V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25V
Gain-
Power - Max350mW
Compression Point (P1dB)-
Package / CaseTO-92
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BF199_J35Z
BF199_J35Z



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