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SeekIC No. : 00214986 Detail

BD250C: Transistors Bipolar (BJT) 120W PNP Silicon

BD250C Data Sheet

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Part Number:: BD250C
Mfg:: Bourns
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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Recent History
What is this?

BD250 evaluate
Transistors Bipolar (BJT) 120W PNP Silicon
BD2500 evaluate
Features: Diffused JunctionLow LeakageLow CostHigh Surge Current CapabilityTypical IR less than 10...
BD2501 evaluate
Features: Diffused JunctionLow LeakageLow CostHigh Surge Current CapabilityTypical IR less than 10...

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	100 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	25 A
DC Collector/Base Gain hfe Min :	25	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	SOT-93

Description

Configuration :
Maximum Operating Frequency :
Packaging :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 25
Maximum DC Collector Current : 25 A
Package / Case : SOT-93

Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
V_CBO	Collector-base voltage	BD246	Open emitter	-55	V
		BD246A		-70
		BD246B		-90
		BD246C		-115
V_CEO	Collector-emitter voltage	BD246	Open base	-45	V
		BD246A		-60
		BD246B		-80
		BD246C		-100
V_EBO	Emitter-base voltage		Open collector	-5	V
I_C	Collector current			-25	A
I_CM	Collector current-peak			-40	A
I_B	Base current			-5	A
P_C	Total power dissipation		T_C=25	125	W
T_j	Junction temperature			-65~150
T_stg	Storage temperature			-65~150

Description

The BD250C features are as follows:

·With TO-3PN package
·Complement to type BD249/A/B/C
·125 W at 25!aC case temperature
·25 A continuous collector current

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BD250C

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