Transistors Bipolar (BJT) 120W PNP Silicon
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 45 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 25 A | ||
DC Collector/Base Gain hfe Min : | 25 | Maximum Operating Temperature : | + 150 C | ||
Mounting Style : | SMD/SMT | Package / Case : | SOT-93 |
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT | |
VCBO |
Collector-base voltage |
BD246 |
Open emitter |
-55 |
V |
BD246A |
-70 | ||||
BD246B |
-90 | ||||
BD246C |
-115 | ||||
VCEO |
Collector-emitter voltage |
BD246 |
Open base |
-45 |
V |
BD246A |
-60 | ||||
BD246B |
-80 | ||||
BD246C |
-100 | ||||
VEBO |
Emitter-base voltage |
Open collector |
-5 |
V | |
IC |
Collector current |
-25 |
A | ||
ICM |
Collector current-peak |
-40 |
A | ||
IB |
Base current |
-5 |
A | ||
PC |
Total power dissipation |
TC =25 |
125 |
W | |
Tj |
Junction temperature |
-65~150 |
|||
Tstg |
Storage temperature |
-65~150 |
The BD250 features are as follows:
·With TO-3PN package
·Complement to type BD249/A/B/C
·125 W at 25!aC case temperature
·25 A continuous collector current