Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
BD13910STU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 80 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 1.5 A | ||
DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-126 | Packaging : | Tube |
Technical/Catalog Information | BD13910STU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Current - Collector (Ic) (Max) | 1.5A |
Power - Max | 1.25W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-126 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BD13910STU BD13910STU |