BD137

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 1.5 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 25 at 5 mA at 2 V
Package / Case : TO-225


Application

* Complement to BD136, BD138 and BD140 respectively




Specifications

Symbol	Parameter		Value	Units
VCBO	Collector-Base Voltage	: BD135	45	V
		: BD137	60	V
		: BD139	80	V
VCEO	Collector-Emitter Voltage	: BD135	45	V
		: BD137	60	V
		: BD139	80	V
VEBO	Emitter-Base Voltage		5	V
IC	Collector Current (DC)		1.5	A
ICP	*Collector Current (Pulse)		3.0	A
IB	Base Current		0.5	A
PC	Collector Dissipation (TC =25)		12.5	W
PC	Collector Dissipation (Ta =25)		1.25	W
TJ	Junction Temperature		150
TSTG	Storage Temperature		- 55~ 150

Parameters:

Technical/Catalog Information	BD137
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	1.5A
Power - Max	12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BD137 BD137