BD13610S

Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

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SeekIC No. : 00205582 Detail

BD13610S: Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

floor Price/Ceiling Price

US $ .1~.19 / Piece | Get Latest Price
Part Number:
BD13610S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.19
  • $.17
  • $.15
  • $.1
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 45 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 1.5 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-126 Packaging : Bulk    

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 45 V
Maximum DC Collector Current : 1.5 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-126


Parameters:

Technical/Catalog InformationBD13610S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)45V
Current - Collector (Ic) (Max)1.5A
Power - Max12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BD13610S
BD13610S



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