Features: · For general AF applications· High collector current· High current gain· Low collector-emitter saturation voltage· Complementary type: BCX 69 (PNP)Specifications Parameter Symbol Values Unit Collector-emitter voltage VCE0 20 V Collector-base voltag...
BCX 68: Features: · For general AF applications· High collector current· High current gain· Low collector-emitter saturation voltage· Complementary type: BCX 69 (PNP)Specifications Parameter Symbo...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
US $.08 - .28 / Piece
Transistors Bipolar (BJT) NPN Silicn AF/SWITCH TRANSISTOR
US $.08 - .28 / Piece
Transistors Bipolar (BJT) NPN Silicon AF Switching Transistor
Parameter |
Symbol |
Values
|
Unit |
Collector-emitter voltage |
VCE0 |
20 |
V |
Collector-base voltage |
VCB0 |
20 |
V |
Emitter-base voltage |
VEB0 |
5 |
V |
Collector current |
IC |
2 |
mA |
Peak collector current |
ICM |
1 |
A |
Base current |
IB |
100 |
mA |
Peak base current |
IBM |
200 |
mA |
Total power dissipation, TS = 130 °C |
Ptot |
1 |
mW |
Junction temperature |
Tj |
150 |
°C |
Storage temperature range |
Tstg |
65 . + 150 |
°C |
Junction - ambient2) |
Rth JA |
75 |
K/W |
Junction - soldering point |
Rth JS |
20 |
K/W |