Features: · High breakdown voltage· Low collector-emitter saturation voltage· Complementary types: BCX 42, BSS 63 (PNP)Specifications Parameter Symbol Values Unit BSS 64 BCX 41 Collector-emitter voltage VCE0 80 125 V Collector-base voltage VCB0 ...
BCX 41: Features: · High breakdown voltage· Low collector-emitter saturation voltage· Complementary types: BCX 42, BSS 63 (PNP)Specifications Parameter Symbol Values Unit BSS 64 BC...
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Transistors Bipolar (BJT) NPN Silicn AF/SWITCH TRANSISTOR
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Transistors Bipolar (BJT) NPN Silicn AF/SWITCH TRANSISTOR
Parameter |
Symbol |
Values
|
Unit | |
BSS 64 |
BCX 41 |
|||
Collector-emitter voltage |
VCE0 |
80 |
125 |
V |
Collector-base voltage |
VCB0 |
120 |
125 |
V |
Emitter-base voltage |
VEB0 |
5 |
5 |
V |
Collector current |
IC |
800 |
mA | |
Peak collector current |
ICM |
1 |
A | |
Base current |
IB |
100 |
mA | |
Peak base current |
IBM |
200 |
mA | |
Total power dissipation, TS = 79 °C |
Ptot |
330 |
mW | |
Junction temperature |
Tj |
150 |
°C | |
Storage temperature range |
Tstg |
65 . + 150 |
°C | |
Junction - ambient2) |
Rth JA |
285 |
K/W | |
Junction - soldering point |
Rth JS |
215 |
K/W |