BC817-40

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Features:

Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier Applications
Complementary PNP Types Available (BC807)




Specifications

Part Number	BC817-40
Product Type	NPN
VCEO (V)	45
IC(A)	0.8
ICM (A)	1
PD (W)	0.31
hFE Min	250
hFE Max	600
@I C (A)	0.1
VCE(SAT) Max (mV)	700
@ IC (A)	0.5
@ IB (mA)	50
fT Min (MHz)	100
RCE (SAT) (m)	-

Characteristic	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	45	V
Emitter-Base Voltage	VEBO	5.0	V
Collector Current	IC	800	mA
Peak Collector Current	ICM	1000	mA
Peak Emitter Current	IEM	1000	mA
Power Dissipation at TSB = 50°C (Note 1)	Pd	310	mW
Thermal Resistance, Junction to Substrate Backside (Note 1)	RSB	320	°C/W
Thermal Resistance, Junction to Ambient Air (Note 1)	RJA	403	°C/W
Operating and Storage Temperature Range	Tj,TSTG	-65 to +150	°C

Description

BC817-40 is a type of NPN general purpose transistor which has two unique features: (1) high current which is max.500 mA; (2) low voltage which is max.45 V.

There are some maximum ratings about BC817-40.(1): collector-emitter voltage(VCEO) is 65 Vdc; (2): collector-base voltage(VCBO)is 50 Vdc(open base and Ic is 10 mA); (3): emitter-base voltage(VEBO) is 5.0 Vdc(open collector); (4): collector current-DC(Ic) is 500 mAdc; (5): total power dissipation(Ptot) is 250 mW when Tamb is not higher than 25; (6): junction temperature(Tj) is 150; (7): storage temperature(Tstg) is -65 to 150.

Besides,there are still some electrical characteristics about BC817-40 when Ta is 25 unless otherwise noted.Off characteristics: (1): collector-base cutoff current(ICBO) is 15 nA max when VCB is 40 V and IE is 0; (2): collector-mitter breakdown voltage(V(BR)CES) is 80 V; (3): DC current gain(hFE) is 110 min,180 typ and 220 max when VCE is 5 V and Ic is 2 mA;(4): collector emitter saturation voltage(VCE(sat)) is 90 mV typ and 250 mV max when Ic is 10 mA and IB is 0.5 mA; (5): collector base saturation voltage(VBE(sat)) is 900 mV max when Ic is 100 mA and IB is 5 mA; (6): emitter-base breakdown voltage(V(BR)EBO) is 6 V min when IFE is 1 uA and Ic is 0; (7): base-emitter turn on voltage(VBE(ON)) is 770 mV max when Ic is 10 mA and VCE is 5 V.

Parameters:

Technical/Catalog Information	BC817-40
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	500mA
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	250 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23-3
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BC817 40 BC81740 497 2531 2 ND 49725312ND 497-2531-2