Transistors Bipolar (BJT) Gen Pur Trans NPN,0.8A,45V
BC817: Transistors Bipolar (BJT) Gen Pur Trans NPN,0.8A,45V
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Packaging : | Reel |
PARAMETER | SYMBOL | VALUE | UNIT |
Collector-Base Voltage | VCBO | 50 | V |
Collector-Emitter Voltage | VCEO | 45 | V |
Emitter-Base Voltage | VEBO | 5 | V |
Peak Pulse Current | ICM | 1 | A |
Continuous Collector Current | IC | 500 | mA |
Base Current | IB | 100 | mA |
Peak Base Current | IBM | 200 | mA |
Power Dissipation at Tamb =25°C | Ptot | 300 | mW |
Operating and Storage Temperature Range | Tj :Tstg | -55 to +150 |
Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
---|---|---|---|---|---|---|---|---|
BC81716MTF | Full Production | RoHS Compliant | $0.0265 | SOT-23 | 3 | TAPE REEL | TBD | Line 1: 8FA |
BC81725MTF | Full Production | RoHS Compliant | $0.0265 | SOT-23 | 3 | TAPE REEL | TBD | Line 1: 8FB |
BC81740MTF | Full Production | RoHS Compliant | $0.0265 | SOT-23 | 3 | TAPE REEL | TBD | Line 1: 8FC |
* Fairchild 1,000 piece Budgetary Pricing |
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product BC817 is available. Click here for more information . |
BC817 is a type of NPN general purpose transistor which has two unique features: (1) high current which is max.500 mA; (2) low voltage which is max.45 V.
There are some maximum ratings about BC817.(1): collector-emitter voltage(VCEO) is 45 Vdc(open base and Ic is 10 mA); (2): collector-base voltage(VCBO)is 50 Vdc(open emitter); (3): emitter-base voltage(VEBO) is 5.0 Vdc(open collector); (4): collector current-DC(Ic) is 500 mAdc; (5): total power dissipation(Ptot) is 250 mW when Tamb is not higher than 25; (6): junction temperature(Tj) is 150; (7): storage temperature(Tstg) is -65 to 150.
Besides,there are still some electrical characteristics about BC817 when Ta is 25 unless otherwise noted.Off characteristics: (1): collector-base cutoff current(ICBO) is 100 nA max when VCB is 20 V and IE is 0; (2): emitter cut-off gain(IEBO) is 100 nA max when Ic is 0 and VEB is 5 V; (3): DC current gain(hFE) is 100 min and 600 max when VCE is 1 V and Ic is 100 mA;(4): collector emitter saturation voltage(VCE(sat)) is 700 mV max when Ic is 500 mA and IB is 50 mA; (5): base emitter voltage(VBE) is 1200 mV max when Ic is 500 mA and VCE is 1 V; (6): transition frequency(fT) is 100 MHz min when Ic is 10 mA, VCE is 5 V and f is 100 MHz.