BC817-25

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Features:

Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier Applications
Complementary PNP Types Available (BC807)




Specifications

Part Number	BC817-25
Product Type	NPN
VCEO (V)	45
IC(A)	0.8
ICM (A)	1
PD (W)	0.31
hFE Min	160
hFE Max	400
@I C (A)	0.1
VCE(SAT) Max (mV)	700
@ IC (A)	0.5
@ IB (mA)	50
fT Min (MHz)	100
RCE (SAT) (m)	-

Characteristic	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	45	V
Emitter-Base Voltage	VEBO	5.0	V
Collector Current	IC	800	mA
Peak Collector Current	ICM	1000	mA
Peak Emitter Current	IEM	1000	mA
Power Dissipation at TSB = 50°C (Note 1)	Pd	310	mW
Thermal Resistance, Junction to Substrate Backside (Note 1)	RSB	320	°C/W
Thermal Resistance, Junction to Ambient Air (Note 1)	RJA	403	°C/W
Operating and Storage Temperature Range	Tj,TSTG	-65 to +150	°C

Description

BC817-25 is a type of NPN general purpose transistor which has two unique features: (1) high current which is max.500 mA; (2) low voltage which is max.45 V.

There are some maximum ratings about BC817-25.(1): collector-emitter voltage(VCEO) is 45 Vdc(open base and Ic is 10 mA); (2): collector-base voltage(VCBO)is 50 Vdc(open emitter); (3): emitter-base voltage(VEBO) is 5.0 Vdc(open collector); (4): collector current-DC(Ic) is 500 mAdc; (5): total power dissipation(Ptot) is 250 mW when Tamb is not higher than 25; (6): junction temperature(Tj) is 150; (7): storage temperature(Tstg) is -65 to 150.

Besides,there are still some electrical characteristics about BC817-25 when Ta is 25 unless otherwise noted.Off characteristics: (1): collector-base cutoff current(ICBO) is 100 nA max when VCB is 20 V and IE is 0; (2): emitter cut-off gain(IEBO) is 100 nA max when Ic is 0 and VEB is 5 V; (3): DC current gain(hFE) is 100 min and 600 max when VCE is 1 V and Ic is 100 mA;(4): collector emitter saturation voltage(VCE(sat)) is 700 mV max when Ic is 500 mA and IB is 50 mA; (5): base emitter voltage(VBE) is 1200 mV max when Ic is 500 mA and VCE is 1 V; (6): transition frequency(fT) is 100 MHz min when Ic is 10 mA, VCE is 5 V and f is 100 MHz.