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B1100/B

Features: Schottky Barrier ChipGuard Ring Die Construction for Transient ProtectionIdeally Suited for Automatic AssemblyLow Power Loss, High EfficiencySurge Overload Rating to 30A PeakFor Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection ApplicationHigh Temperatu...

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B1100/B: Features: Schottky Barrier ChipGuard Ring Die Construction for Transient ProtectionIdeally Suited for Automatic AssemblyLow Power Loss, High EfficiencySurge Overload Rating to 30A PeakFor Use in Low...

B1100/B Data Sheet

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Part Number:
B1100/B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 30A Peak
For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application
High Temperature Soldering: 260C/10 Second at Terminal
Plastic Material: UL Flammability Classification Rating 94V-0


Specifications

Characteristic Symbol B170/B B180/B B190/B B1100/B Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage		 VRRM
VRWM
VR		 70 80 90 100 V
RMS Reverse Voltage VR(RMS) 49 56 63 70 V
Average Rectified Output Current @ TT = 125 IO 1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)		 IFSM 30 A
Forward Voltage @ IF = 1.0A @ TA = 25
@ TA = 100		 VFM 0.79
0.69		 V
Peak Reverse Current
at Rated DC Blocking Voltage		 @ TA = 25
@ TA = 100		 IRM 0.5
5.0		 mA
Typical Junction Capacitance (Note 2) Cj 80 pF
Typical Thermal Resistance Junction to Terminal (Note 1) RJT 25 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150



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