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B1100

Features: ·For surface mounted applications·Metal-Semiconductor junction with guardring·Epitaxial construction·Very Low forward voltage drop·High current capability·Plastic material has UL flammability classification 94V-0·For use in low voltage, high frequency inverters,·free wheeling, and polari...

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SeekIC No. : 004293670 Detail

B1100: Features: ·For surface mounted applications·Metal-Semiconductor junction with guardring·Epitaxial construction·Very Low forward voltage drop·High current capability·Plastic material has UL flammabil...

B1100 Data Sheet

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Part Number:
B1100
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·For surface mounted applications
·Metal-Semiconductor junction with guardring
·Epitaxial construction
·Very Low forward voltage drop
·High current capability
·Plastic material has UL flammability classification 94V-0
·For use in low voltage, high frequency inverters,
·free wheeling, and polarity protection applications




Specifications

Product Type Schottky
Part Number B1100
Max Average Rectified Current IO (A) 1
@ Terminal Temperature TT (oC) 125
Peak Repetitive Reverse Voltage VRRM (V) 100
Peak Forward Surge Current IFSM (A) 30
Forward Voltage Drop VF (V) 0.79
@ IF (A) 1
Max Reverse Current IR (mA) 0.5
@ VR (V) 100
Total Capacitance CT (pF) 80


CHARACTERISTICS SYMBOL B170 B180 B190 B1100
Maximum Recurrent Peak Reverse Voltage VRRM 70 80 90 100 V
Maximum RMS Voltage VRMS 46 56 63 70 V
Maximum DC Blocking Voltage VDC 70 80 30 100 V
Maximum Average Forward
Rectified Current@TL =100 C		 I(AV)

1.0

 A
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)		 IFSM

30

 A
Maximum forward @TJ =25 C
Voltage at 1.0A DC @TJ =100 C		 VF

0.79
0.69

 V
Maximum DC Reverse Current@TJ =25 C
at Rated DC Blocking Voltage @TJ =100 C		 IR

0.5
5.0

 mA
Typical Junction
Capacitance (Note 1)		 CJ

30

 pF
Typical Thermal Resistance (Note 2) R0JL

25

 °C/W
Operating Temperature Range TJ

-55 to +125

 °C
Storage Temperature Range TSTG

-55 to +150

 °C
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.




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