Features: Power dissipation- Operating: 40 mA maximum- Standby: 70 µA maximum- Deep power-down standby: 5 µA CE1s# and CE2ps Chip Select Power down features using CE1s# and CE2ps Data retention supply voltage: 2.7 to 3.3 volt Byte data control: LB#s (DQ7DQ0), UB#s (DQ15DQ8) 8-word pag...
Am49PDL127AH: Features: Power dissipation- Operating: 40 mA maximum- Standby: 70 µA maximum- Deep power-down standby: 5 µA CE1s# and CE2ps Chip Select Power down features using CE1s# and CE2ps Data r...
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Features: `Power supply voltage of 2.7 to 3.3 volt`High performance- Access time as fast as 55 ns`...
Features: The Am29DL640G is a 64 megabit, 3.0 volt-only flash memory device, organized as 4,194,30...
Features: The Am29DL640G is a 64 megabit, 3.0 volt-only flash memory device, organized as 4,194,30...
The Am49PDL127AH is a 128 Mbit, 3.0 volt-only Page Mode and Simultaneous Read/Write Flash memory device organized as 8 Mwords. The word-wide data (x16) appears on DQ15-DQ0. This device can be programmed in-system or in standard EPROM programmers. A 12.0 V VPP is not required for write or erase operations.
Am49PDL127AH offers fast page access time of 25 and 30 ns, with corresponding random access times of 65 and 70 ns, respectively, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#f1, CE#f2), write enable (WE#) and output enable (OE#) controls. Dual Chip Enables allow access to two 64 Mbit partitions of the 128 Mbit memory space.