AWE6174

The AWE6174 Power amplifier module (PAM) supports dual, tri and quad band applications for both GMSK and 8-PSK modulations when used in an open loop polar architecture. The module consists of two InGaP HBT amplifier chains - one to support GSM850/900 bands, the other for DCS/PCS bands -and a multi-function (CMOS) block.

The multifunction block (MFB) integrates a power control function, logic circuitry and a regulated voltage source for PA biasing. This power control function is based on voltage regulation (LDO), where the output power is set by applying an analog voltage to VRAMP. This approach facilitates fast and easy production calibration and reduces the number of external components required to complete a power control Function.

Furthermore, the MFB supports the use of an external DC-DC step down converter (optional connected to VCC input) to reduce current consumption at backed off output power levels in GMSK mode. The power control architecture consists of two LDO's (VBATT and VCC inputs); one (VBATT) for use over the entire power control range, the other (VCC) for use from medium to low power levels. Only one LDO can be enabled at a time. The logic signal on the VMODE pin determines which voltage (LDO) mode is active. All of the RF ports for this device are internally matched to 50 .