AWE6157

The AWE6157 Power amplifier module (PAM) supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. The module consists of two InGaP HBT amplifier chains - one to support GSM850/900 bands, the other for DCS/PCS bands - and a multifunction (CMOS) block.

The multifunction block (MFB) integrates a power control function for use in the GMSK mode, where the output power is set by applying an analog voltage to the VRAMP pin. This approach facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. An RC filter (fc = 300kHz) is integrated at the VRAMP input to further reduce the number of external components. Furthermore, the power control function includes battery detection circuitry for robust ORFS transient spectrum performance at low battery voltages.

In EDGE mode, the VMODE logic input configures the selected PA for fixed gain operation, where the output power is controlled by varying the RF input power. In addition, the Vramp input functions as a digital bias control, enabling the reduction of current consumption at low EDGE output power levels. All of the RF ports for this device are internally matched to 50?.