AT28LV64B

Features:

*Single ±3.3V   10% Supply
*3-Volt-Only Read and Write Operation
*Software-Protected Programming
*Low Power Dissipation 15 mA Active Current 20 A CMOS Standby Current
*Fast Read Access Time -  200 ns
*Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer
*Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum 1 to 64-Byte Page Write Operation
*DATA Polling for End of Write Detection
* High Reliability CMOS Technology Endurance: 10,000 Cycles Data Retention: 10 Years
*JEDEC Approved Byte-Wide Pinout
*Commercial and Industrial Temperature Ranges



Pinout




Specifications

Temperature Under Bias..............-55°C to +125°C
Storage Temperature..................-65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground.............-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground................... -0.6V to +13.5V


Description

The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers ac- cess times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 20 A.

The AT28LV64B is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow