Features: ` 2.7 to 3.6V Supply
Full Read and Write Operation
` Low Power Dissipation
8 mA Active Current
50 A CMOS Standby Current
` Read Access Time - 250 ns
` Byte Write - 3 ms
` Direct Microprocessor Control
DATA Polling
READ/BUSY Open Drain Output on TSOP
` High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
` Low Voltage CMOS Compatible Inputs and Outputs
` JEDEC Approved Byte Wide Pinout
` Commercial and Industrial Temperature RangesPinout
SpecificationsTemperature Under Bias................. -55°C to +125°C
Storage Temperature...................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ................... -0.6V to +13.5V
*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
DescriptionThe AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel's eliable nonvolatile CMOS technology.
The AT28BV16 is accessed like a static RAM for the read or write cycles without the need of external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. The end of a write cycle can be determined by DATA polling of I/O7. Once the end of a write cycle has been detected, a new access for a read or a write can begin.
The CMOS technology offers fast access times of 250 ns at low power dissipation. When the AT28BV16 is deselected the standby current is less than 50 A.
Atmel's 28BV16 has additional features to ensure high quality and manufacturability. The AT28BV16 utilizes error correction internally for extended endurance and for improved data retention characteristics. An extra 32-bytes of E2PROM are available for device identification or tracking.
AT28BV16 Data Sheet
