AT28LV256

Features:

• Fast Read Access Time - 200 ns
• Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer
• Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum 1 to 64-Byte Page Write Operation
• Low Power Dissipation 15 mA Active Current 20  µ A CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology Endurance: 10,000 Cycles Data Retention: 10 Years
• Single 3.3V  ±  5% Supply
• JEDEC Approved Byte-Wide Pinout
• Commercial and Industrial Temperature Ranges



Pinout




Specifications

Temperature Under Bias.................-55°C to +125°C
Storage Temperature.....................-65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground.......................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.................-0.6V to VCC + 0.6V
Voltage on
OE and A9
with Respect to Ground........................-0.6V to +13.5V


Description

The AT28LV256 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 200  µ A.

The AT28LV256 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing of up to 64-bytes simultaneously. During a write cycle, the addresses and 1 to