Features: ` Single 3.3V ± 10% Supply ` Fast Read Access Time - 200 ns ` Automatic Page Write Operation Internal Address and Data Latches for 128-Bytes Internal Control Timer ` Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum 1 to 128-Byte Page Write Operation` Low Power Dissipation 15 m...
AT28LV010: Features: ` Single 3.3V ± 10% Supply ` Fast Read Access Time - 200 ns ` Automatic Page Write Operation Internal Address and Data Latches for 128-Bytes Internal Control Timer ` Fast Write Cycle Time ...
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Temperature Under Bias................. -55 to +125
Storage Temperature...................... -65to +150
All Input Voltages (including NC Pins)
with Respect to Ground ................ -0.6V to +6.25V
All Output Voltages
with Respect to Ground ..........-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ............... -0.6V to +13.5V
*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Programmable Read Only Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the AT28LV010 offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 20 mA.