AT28HC64B

Features:

*Fast Read Access Time - 55 ns
*Automatic Page Write Operation
*Internal Address and Data Latches for 64-Bytes Fast Write Cycle Times
*Page Write Cycle Time: 10 ms Maximum 1 to 64-Byte Page Write Operation
*Low Power Dissipation 40 mA Active Current 100 A CMOS Standby Current
* Hardware and Software Data Protection
*DATA Polling and Toggle Bit for End of Write Detection
*High Reliability CMOS Technology
*Endurance: 100,000 Cycles
*Data Retention: 10 Years Single 5V    ±10% Supply
*CMOS and TTL Compatible Inputs and Outputs
*JEDEC Approved Byte-Wide Pinout
*Commercial and Industrial Temperature Ranges



Pinout




Specifications

Temperature Under Bias.............-55°C to +125°C
Storage Temperature.................-65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground................. -0.6V to +6.25V
All Output Voltages
with Respect to Ground...........-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground................. -0.6V to +13.5V


Description

The AT28HC64B is a high-performance electrically erasable and programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipation of just 220 mW. When the AT28HC64B is deselected, the CMOS standby current is less than 100 A.

The AT28HC64B is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow