AT28C64B

Features:

* Fast Read Access Time 150 ns
* Automatic Page Write Operation
  Internal Address and Data Latches for 64 Bytes
* Fast Write Cycle Times
  Page Write Cycle Time: 10 ms Maximum
  1 to 64-byte Page Write Operation
* Low Power Dissipation
  40 mA Active Current
  100 A CMOS Standby Current
* Hardware and Software Data Protection
* DATA Polling and Toggle Bit for End of Write Detection
* High Reliability CMOS Technology
  Endurance: 100,000 Cycles
  Data Retention: 10 Years
* Single 5V ± 10% Supply
* CMOS and TTL Compatible Inputs and Outputs
* JEDEC Approved Byte-wide Pinout
* Commercial and Industrial Temperature Ranges


Pinout




Specifications

Temperature Under Bias................ -55°C to +125°C
Storage Temperature.................... -65°C to +150°C
All Input Voltages
including NC Pins)
with Respect to Ground......................-0.6V to +6.25V
All Output Voltages
with Respect to Ground...............-0.6V to V_CC  + 0.6V
Voltage on OE and A9
with Respect to Ground.........................-6V to +13.5V


Description

The AT28C64B is a high-performance electrically-erasable and programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the AT28C64B offers access times to 150 ns with power dissipation of just 220 mW. When the device is deselected, the CMOS standby current is less than 100 A. (continued)