Features: Fast Read Access Time - 120 ns Fast Byte Write - 200 ms or 1 ms Self-Timed Byte Write CycleInternal Address and Data LatchesInternal Control TimerAutomatic Clear Before Write Direct Microprocessor ControlREADY/BUSY Open Drain OutputDATA Polling Low Power30 mA Active Current100 mA CMOS St...
AT28C64: Features: Fast Read Access Time - 120 ns Fast Byte Write - 200 ms or 1 ms Self-Timed Byte Write CycleInternal Address and Data LatchesInternal Control TimerAutomatic Clear Before Write Direct Microp...
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The AT28C64isalow-power, high-performance 8,192 words by 8 bit nonvolatile Electrically Erasable and Programmable Read Only Memory with popular, easy to use features. The device is manufactured with Atmel's reliable nonvolatile technology.
TheAT28C64 is accessed like a Static RAM for the reador write cycles without the need for external components.During a byte write, the address and data are latched internally,freeing the microprocessor address and data busfor other operations. Following the initiation of a write cycle,the AT28C64 will go to a busy state and automaticallyclear and write the latched data using an internal controltimer. The device includes two methods for detecting theend of a write cycle, level detection of RDY SY (unlesspin 1 is N.C.) and DATA POLLING of I/O7. Once the endof a write cycle has been detected, a new access for aread or write can begin.
The CMOS technology offers fast access times of 120 nsat low power dissipation. When the AT28C64 is deselected thestandby current is less than 100 mA.
Atmel's AT28C64 has additional features to ensure highquality and manufacturability. The AT28C64 utilizes error correctioninternally for extended endurance and for improveddata retention characteristics. An extra 32-bytes of E2PROM are available for device identification or tracking.