AT28C17

Features:

` Fast Read Access Time - 150 ns
` Fast Byte Write - 200 s or 1 ms
` Self-Timed Byte Write Cycle
    Internal Address and Data Latches
    Internal Control Timer
    Automatic Clear Before Write
` Direct Microprocessor Control
    DATA POLLING
    READY/BUSY Open Drain Output
` Low Power
    30 mA Active Current
    100 a CMOS Standby Current
` High Reliability
    Endurance: 10⁴ or 10⁵ Cycles
    Data Retention: 10 Years
` 5V  ± 10% Supply
` CMOS & TTL Compatible Inputs and Outputs
` JEDEC Approved Byte Wide Pinout
` Commercial and Industrial Temperature Ranges


Pinout




Specifications

Temperature Under Bias................. -55°C to +125°C
Storage Temperature...................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ................... -0.6V to +13.5V

*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.


Description

The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel's reliable nonvolatile CMOS technology.

The AT28C17 is accessed like a static RAM for the read
or write cycles without the need of external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the AT28C17 will go to a busy state and automatically clear and write the latched data using an internal control timer. The device includes two methods for detecting the end of a write cycle, level detection of RDY/BUSY and DATA POLLING of I/O₇. Once the end of a write cycle has been detected, a new access for a read or a write can begin.

The CMOS technology offers fast access times of 150 ns at low power dissipation. When the AT28C17 is deselected the standby current is less than 100 A.

Atmel's AT28C17 has additional features to ensure high quality and manufacturability. The AT28C17 utilizes error correction internally for extended endurance and for improved data retention characteristics. An extra 32-bytes of E²PROM are available for device identification or tracking.