Features: * Fast Read Access Time - 150 ns* Fast Byte Write - 200 s or 1 ms* Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write* Direct Microprocessor Control DATA POLLING* Low Power 30 mA Active Current 100 A CMOS Standby Current*...
AT28C16E: Features: * Fast Read Access Time - 150 ns* Fast Byte Write - 200 s or 1 ms* Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write* Dir...
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* Fast Read Access Time - 150 ns
* Fast Byte Write - 200 s or 1 ms
* Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write
* Direct Microprocessor Control DATA POLLING
* Low Power 30 mA Active Current 100 A CMOS Standby Current
* High Reliability Endurance: 104 or 105 Cycles Data Retention: 10 Years
* 5V ± 10% Supply
* CMOS & TTL Compatible Inputs and Outputs
* JEDEC Approved Byte Wide Pinout
* Commercial and Industrial Temperature Ranges
The AT28C16E is a low-power, high-performance Electrically Erasable and Program-mable Read Only Memory with easy to use features. The AT28C16E is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel's reliable nonvolatile CMOS technology. (continued)