AT28C040

` Fast Read Access Time - 150 ns
` Automatic Page Write Operation
    Internal Address and Data Latches for 256-Bytes
    Internal Control Timer
` Fast Write Cycle Time
    Page Write Cycle Time - 10 ms Maximum
    1 to 256-Byte Page Write Operation
` Low Power Dissipation
     80 mA Active Current
     300 A CMOS Standby Current
` Hardware and Software Data Protection
` DATA Polling for End of Write Detection
` High Reliability CMOS Technology
    Endurance: 10,000 Cycles
    Data Retention: 10 Years
` Single 5V ± 10% Supply
` CMOS and TTL Compatible Inputs and Outputs
` JEDEC Approved Byte-Wide Pinout
` Full Military, Commercial and Industrial Temperature Ranges

Temperature Under Bias............... -55°C to +125°C
Storage Temperature.................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .......... ...-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ....... ........... -0.6V to +13.5V

The AT28C040 is a high-performance electrically erasable and programmable read only memory (E²PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is less than 300 A.