AT28C010-12DK

Features: • Fast Read Access Time 120 ns• Automatic Page Write Operation -ternal Address and Data Latches for 128 Bytes -ternal Control Timer• Fast Write Cycle Time -ge Write Cycle Time 10 ms Maximum -to 128-byte Page Write Operation• Low Power Dissipation - mA Active Cur...

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SeekIC No. : 004289852 Detail

AT28C010-12DK: Features: • Fast Read Access Time 120 ns• Automatic Page Write Operation -ternal Address and Data Latches for 128 Bytes -ternal Control Timer• Fast Write Cycle Time -ge Write Cycl...

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Part Number:
AT28C010-12DK
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/28

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Product Details

Description



Features:

• Fast Read Access Time 120 ns
• Automatic Page Write Operation
   -ternal Address and Data Latches for 128 Bytes
   -ternal Control Timer
• Fast Write Cycle Time
   -ge Write Cycle Time 10 ms Maximum
   -to 128-byte Page Write Operation
• Low Power Dissipation
   - mA Active Current
   -0 A CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
   -durance: 104 or 105 Cycles
   -ta Retention: 10 Years
• Operating Range: 4.5V to 5.5V, -55 to +125°C
• CMOS and TTL Compatible Inputs and Outputs
• Batch Tested for 10 Krad TID and 70 MeV Latch-up Capability
• JEDEC Approved byte-Wide Pinout
• 435 Mils Wide 32-Pin Flat Pack Package



Pinout

  Connection Diagram


Specifications

Temperature Under Bias.............................. -55°C to +125°C
Storage Temperature.................................. -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V

*NOTICE: Stresses beyond those listed under "Absolute aximum Ratings" may cause permanent damage o the device. This is a stress rating only and unctional operation of the device at these or any ther conditions beyond those indicated in the perational sections of this specification is not mplied. Exposure to absolute maximum rating onditions for extended periods may affect evice reliability.




Description

The AT28C010-12DK is a high-performance Electrically Erasable and Programmable ead-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 its. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device ffers access times to 120 ns with power dissipation of just 440 mW. When the device s deselected, the CMOS standby current is less than 300 A.

The AT28C010-12DK is accessed like a Static RAM for the read or write cycle without he need for external components. The AT28C010-12DK contains a 128-byte page register to llow writing of up to 128 bytes simultaneously. During a write cycle, the address and  to 128 bytes of data are internally latched, freeing the address and data bus for ther operations. Following the initiation of a write cycle, the device will automatically rite the latched data using an internal control timer. The end of a write cycle can be etected by DATA POLLING of I/O7. Once the end of a write cycle has been detected  new access for a read or write can begin.

Atmel's AT28C010-12DKhas additional features to ensure high quality in manufacturing. The AT28C010-12DK utilizes internal error correction for extended endurance and improved data  etention characteristics. An optional software data protection mechanism is available o guard against inadvertent writes. The AT28C010-12DK also includes an extra 128 bytes of EPROM for device identification or tracking.




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