DescriptionThe AT28C010-12DK-M is a high-performance electrically erasable and programmable read-only memory.Its one megabit of memory is organized as 131,072 words by 8 bits.Manufactured with atmel's advanced nonvolatile CMOS technology,the device offers access times to 120 ns with power dissipat...
AT28C010-12DK-M: DescriptionThe AT28C010-12DK-M is a high-performance electrically erasable and programmable read-only memory.Its one megabit of memory is organized as 131,072 words by 8 bits.Manufactured with atmel...
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The AT28C010-12DK-M is a high-performance electrically erasable and programmable read-only memory.Its one megabit of memory is organized as 131,072 words by 8 bits.Manufactured with atmel's advanced nonvolatile CMOS technology,the device offers access times to 120 ns with power dissipation of just 440 mW.
The absolute maximum ratings of the AT28C010-12DK-M can be summarized as:(1):the parameter is temperature under bias,the rating is -55 to +125,the unit is ;(2):the parameter is storage temperature,the rating is -65 to +150,the unit is ;(3):the parameter is all input voltages (including NC pins) with respect to ground,the rating is -0.6 to +6.25,the unit is V;(4):the parameter is all output voltages with respect to ground,the rating is -0.6 to VCC+0.6,the unit is V;(5):the parameter is voltage on OE and A9 with respect to ground,the rating is -0.6 to +13.5,the unit is V.