Features: ` 2.7V to 3.6V Supply
Full Read and Write Operation
` Low Power Dissipation
8 mA Active Current
50 A CMOS Standby Current
` Read Access Time - 300 ns
` Byte Write - 3 ms
` Direct Microprocessor Control
DATA Polling
READY/BUSY Open Drain Output
` High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
` JEDEC Approved Byte-Wide Pinout
` Commercial and Industrial Temperature RangesPinout
SpecificationsTemperature Under Bias................. -55°C to +125°C
Storage Temperature...................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground ..............-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ................... -0.6V to +13.5V
*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
DescriptionThe AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation less than 30 mW. When the device is deselected the standby current is less than 50 A.
The AT28BV64 is accessed like a Static RAM for the read or write cycles without the need for external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Fol-lowing the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. The device includes two methods for detecting the end of a write cycle, level detection of RDY/BUSY and DATA polling of I/O7. Once the end of a write cycle has been detected, a new access for a read or write can begin.
Atmel's AT28BV64 has additional features to ensure high quality and manufacturability. The AT28BV64 utilizes error correction internally for extended endurance and for improved data retention characteristics. An extra 32-bytes of E2PROM are available for device identification or tracking.
AT28BV64 Data Sheet
