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AT28BV256

Features: • Single 2.7V - 3.6V Supply• Fast Read Access Time 200 ns• Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer• Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum 1- to 64-byte Page Write OperationR...

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SeekIC No. : 004289847 Detail

AT28BV256: Features: • Single 2.7V - 3.6V Supply• Fast Read Access Time 200 ns• Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer• ...

AT28BV256 Data Sheet

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Part Number:
AT28BV256
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single 2.7V - 3.6V Supply
• Fast Read Access Time 200 ns
• Automatic Page Write Operation
   Internal Address and Data Latches for 64 Bytes
   Internal Control Timer
• Fast Write Cycle Times
   Page Write Cycle Time: 10 ms Maximum
   1- to 64-byte Page Write Operation
• Low Power Dissipation
   15 mA Active Current
   20 µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
   Endurance: 10,000 Cycles
   Data Retention: 10 Years
• JEDEC Approved Byte-wide Pinout
• Commercial and Industrial Temperature Ranges


Pinout

Connection Diagram


Specifications

Temperature under Bias ................................ -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
All Input Voltages (including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages 
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V


Description

The AT28BV256 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the AT28BV256 offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 200 µA.




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