AS6WA5128

The AS6WA5128 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288
words * 8 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired.

Equal address access of AS6WA5128 and cycle times (t_AA, t_RC, t_WC) of 55 ns are ideal for low-power applications. Active high and low chip selects (CS) permit easy memory expansion with multiple-bank memory systems.

When CS is high, the device enters standby mode: the AS6WA5128 is guaranteed not to exceed 72 W power consumption at 3.6V and 55ns. The device also returns data when V_CC is reduced to 1.5V for even lower power consumption.

A write cycle of AS6WA5128 is accomplished by asserting write enable (WE) and chip select (CS) low. Data on the input pins I/O1I/O8 is written on the rising edge of WE (write cycle 1) orCS (write cycle 2). To avoid bus contention, external devices should drive I/ O pins only after outputs have been disabled with output enable (OE) or write enable (WE).

A read cycle of AS6WA5128 is accomplished by asserting output enable (OE), chip select (CS), with write enable (WE) High. The chip drives I/ O pins with the data word referenced by the input address. When either chip select or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode.

All chip inputs and outputs are CMOS-compatible, and operation is from a single 3.0 to 3.6V supply. AS6WA5128 is available in the JEDEC standard 36(48)-ball FBGA package.