Features: ·Ultra High Speed Asynchronous Operation·Fully Static, No Clocks·Multiple center power and ground pins for improvednoise immunity· Easy memory expansion with CE\ and OE\options· All inputs and outputs are TTL-compatible· Single +5V Power Supply +/- 10%·Data Retention Functionality Testin...
AS5C512K8F-17_H: Features: ·Ultra High Speed Asynchronous Operation·Fully Static, No Clocks·Multiple center power and ground pins for improvednoise immunity· Easy memory expansion with CE\ and OE\options· All inputs...
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Features: · Access times of 15, 20 and 25 ns·Fast output enable (tAOE ) for cache applications· Lo...
The AS5C512K8F-17_H is a high speed SRAM. It offers flexibility in high-speed memory applications, with chip enable (CE\) and output enable (OE\) capabilities. These features can place the outputs in High-Z for additional flexibility in system design.
Writing to the AS5C512K8F-17_H is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\emains HIGH and CE\ and OE\ go LOW.
As a option, the AS5C512K8F-17_H can be supplied offering a reduced power tandby mode, allowing system designers to meet low standby power equirements. This device operates from a single +5V power supply and all inputs and outputs are fully TTL-compatible.
The AS5C512K8F-17_H offers the convenience and reliability of the AS5C512K8 SRAM and has the cost advantage of a durable plastic.The AS5C512K8F-17_H is footprint compatible with 36 pin CSOJ package of the SMD 5692-95600.