AS5C512K8F-17_H

Features: ·Ultra High Speed Asynchronous Operation·Fully Static, No Clocks·Multiple center power and ground pins for improvednoise immunity· Easy memory expansion with CE\ and OE\options· All inputs and outputs are TTL-compatible· Single +5V Power Supply +/- 10%·Data Retention Functionality Testin...

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AS5C512K8F-17_H Picture
SeekIC No. : 004288406 Detail

AS5C512K8F-17_H: Features: ·Ultra High Speed Asynchronous Operation·Fully Static, No Clocks·Multiple center power and ground pins for improvednoise immunity· Easy memory expansion with CE\ and OE\options· All inputs...

floor Price/Ceiling Price

Part Number:
AS5C512K8F-17_H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

· Ultra High Speed Asynchronous Operation
·Fully Static, No Clocks
·Multiple center power and ground pins for improved noise immunity
· Easy memory expansion with CE\ and OE\options
· All inputs and outputs are TTL-compatible
· Single +5V Power Supply +/- 10%
·Data Retention Functionality Testing (Contact Factory)
·Cost Efficient Plastic Packaging
· Extended Testing Over -55oC  to  +125oC for plastics
·Plastic 36 pin PSOJ is fully compatible with the Ceramic 36 pin SOJ
· 3.3V Future Offering



Pinout

  Connection Diagram


Specifications

Voltage on Vcc Supply Relative to Vss
Vcc  .......................................................................-.5V to +7.0V
Storage Temperature (Plastic)......................-65°C to +150°C
Storage Temperature (Ceramic)...................-55°C to +125°C
Short Circuit Output Current (per I/O).............................20mA
Voltage on any Pin Relative to Vss.....................-.5V to Vcc+1V
Maximum Junction Temperature**..............................+150°C
Power Dissipation ................................................................1W



Description

The AS5C512K8F-17_H is a high speed SRAM.  It offers flexibility in high-speed memory applications, with chip enable (CE\) and output enable (OE\) capabilities.  These features can place the outputs in High-Z for additional flexibility in system design.

Writing to the AS5C512K8F-17_H is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\emains HIGH and CE\ and OE\ go LOW.

As a option, the AS5C512K8F-17_H can be supplied offering  a reduced power tandby mode, allowing system designers to meet low standby power equirements.  This device operates from a single +5V power supply and all inputs and outputs are fully TTL-compatible.

The AS5C512K8F-17_H offers the convenience and reliability of the AS5C512K8 SRAM and has the cost advantage of a durable plastic.The AS5C512K8F-17_H is footprint compatible with 36 pin  CSOJ package of the  SMD 5692-95600.




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