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AS5C2568

Features: ·Access Times: 12, 15, & 20ns· Fast output enable (tDOE) for cache applications· Low active power: 400 mW (TYP)· Low power standby· Fully static operation, no clock or refresh required· High-performance, low-power CMOS double-metal proces· Single +5V (±10%) Power Supply· Easy memory ...

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SeekIC No. : 004288400 Detail

AS5C2568: Features: ·Access Times: 12, 15, & 20ns· Fast output enable (tDOE) for cache applications· Low active power: 400 mW (TYP)· Low power standby· Fully static operation, no clock or refresh required...

AS5C2568 Data Sheet

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Part Number:
AS5C2568
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

· Access Times: 12, 15, & 20ns
· Fast output enable (tDOE) for cache applications
· Low active power:  400 mW (TYP)
· Low power standby
· Fully static operation, no clock or refresh required
· High-performance, low-power CMOS double-metal proces
· Single +5V (±10%) Power Supply
· Easy memory expansion with CE\
· All inputs and outputs are TTL compatible 


Pinout

Connection Diagram


Specifications

Voltage on Any Input or DQ Relative to Vss.......................-0.5V to Vcc +0.5V
Voltage on Vcc Supply Relative to Vss............................................-1V to +7V
Storage Temperature......................................................-65 °C to +150 °C
Power Dissipation.....................................................................................1W
Short Circuit Output Current..................................................................20mA
Lead Temperature (soldering 10 seconds)......................................+260 °C
Max. Junction Temperature..............................................................+175 °C


Description

The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell.  These SRAMs AS5C2568 are fabricated using double-layer metal, double-layer polysilicon technology.

For flexibility in high-speed memory applications, Aus-tin Semiconductor offers chip enable (CE\) and output enable (OE\) capability.  These enhancements can place the outputs in High-Z for additional flexibility in system design.

Writing to AS5C2568 is accomplished when write enable (WE\) and CE\ inputs are both LOW.  Reading is accom-plished when WE\ remains HIGH and CE\ and OE\ go LOW.The device offers a reduced power standby mode when dis-abled.  AS5C2568 allows system designs to achieve low standby power requirements.

AS5C2568 operate from a single +5V power supply and all inputs and outputs are fully TTL compatible.




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