Features: • Ultra High Speed Asynchronous Operation• Fully Static, No Clocks• Multiple center power and ground pins for improved noise immunity• Easy memory expansion with CE\ and OE\ options• All inputs and outputs are TTL-compatible• Single +5V Power Supply +/...
AS5C512K8: Features: • Ultra High Speed Asynchronous Operation• Fully Static, No Clocks• Multiple center power and ground pins for improved noise immunity• Easy memory expansion with CE...
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Features: · Access times of 15, 20 and 25 ns·Fast output enable (tAOE ) for cache applications· Lo...
The AS5C512K8 is a high speed SRAM. It offers flexibility in high-speed memory applications, with chip enable (CE\) and output enable (OE\) capabilities. These features can place the outputs in High-Z for additional flexibility in system design.
Writing to AS5C512K8 is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW.
As a option, the AS5C512K8 can be supplied offering a reduced power standby mode, allowing system designers to meet low standby power requirements. This device operates from a single +5V power supply and all inputs and outputs are fully TTL-compatible.
The AS5C512K8DJ offers the convenience and reliability of the AS5C512K8 SRAM and has the cost advantage of a durable plastic. The AS5C512K8DJ is footprint compatible with 36 pin CSOJ package of the SMD 5692-95600.