AS5C4009

Voltage on Vcc Supply Relative to Vss........................-.5V to +7.0V
Voltage on any pin Relative to Vss.............................-.5V to +7.0V
Storage Temperature ........................................-65°C to +150°C
Operating Temperature Range.............................-55oC to +125oC
Soldering Temperature Range...............................................260oC
Maximum Junction Temperature**.....................................+150°C
Power Dissipation....................................................................1.0W
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow.

The AS5C4009 is organized as 524,288 x 8 SRAM utilizing a special ultra low power design process. ASI's pinout adheres to the JEDEC standard for pinout on 4 megabit SRAMs.

The evolutionary 32 pin version allows for easy upgrades from the 1 meg SRAM design. For flexibility in memory applications, ASI offers chip enable (CE\) and output enable (OE\) capabilities.

These features OF  AS5C4009 can place the outputs in High-Z for additional flexibility in system design. This devices operates from a single +5V power supply and all inputs and outputs are fully TTL-compatible. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW.

The AS5C4009 offers a reduced power standby mode when disabled, by lowering VCC to 2V and maintaining CE\ = 2V. This allows system designers to meet ultra low standby power requirements.