Features: Positive Voltage Control (0/+3 to +5 V)High Isolation (50 dB @ 0.9, 1.9 GHz)5Low DC Power ConsumptionIdeal for Cellular, GSM, DCS,PCS, 3G and 2.4 GHz ISM ApplicationsPinoutSpecifications Characteristic Value RF Input Power 1 W Max. > 500 MHz0/+8 V Control Supply Voltage ...
AS176-59: Features: Positive Voltage Control (0/+3 to +5 V)High Isolation (50 dB @ 0.9, 1.9 GHz)5Low DC Power ConsumptionIdeal for Cellular, GSM, DCS,PCS, 3G and 2.4 GHz ISM ApplicationsPinoutSpecifications ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Characteristic | Value |
RF Input Power | 1 W Max. > 500 MHz 0/+8 V Control |
Supply Voltage | +8 V |
Control Voltage | -0.2 V, +8 V |
Operating Temperature | -40°C to +85°C |
Storage Temperature | -65°C to +150°C |
JC | 25°C/W |
The AS176-59 is a GaAs FET IC SPDT switch packaged in a MSOP-8 plastic package for low cost, high isolation commercial applications. Ideal building block for base station dual band applications where synthesizer isolation is critical. Use in conjunction with the AS165-59 SPST switch to meet GSM synthesizer isolation requirements.