APW7045

Features:

• 2 Regulated Voltage are provided−Switching Power for Fixed Voltage (1.0V)−Linear Regulator for VMEM(2.5V)
• Simple Single-Loop Control Design−Voltage-Mode PWM Control
• Excellent Output Voltage Regulation−PWM Output: ±1%−Linear Output: ±3%
• Fast Transient Response−High-Bandwidth Error Amplifier−Full 0% to 100% Duty Ratio
• Power-Good Output Voltage Monitor
• Over-Voltage and Over-Current Fault Monitors
• Small Converter Size−200KHz Free-Running Oscillator ;Progammable from 50KHz to 800KHz−Reduce External Component Count


Application

• Motherboard Power Regulation for Computers
• Low-Voltage Distributed Power Supplies
• VGA Card Power Regulation
• DDR SDRAM Power Regulation


Pinout




Specifications

Symbol	Parameter	Rating	Unit
Vcc	Supply Voltage	15	V
VI , VO	Input , Output or I/O Voltage	GND -0.3 V to VCC +0.3	V
TA	Operating Ambient Temperature Range	0 to 70	°C
TJ	Junction Temperature Range	0 to 125	°C
TSTG	Storage Temperature Range	-65 to +150	°C
TS	Soldering Temperature	300 ,10 seconds	°C

Description

The APW7045 integrates PWM controller and linear controller, as well as the monitoring and protection functions into a single package, which provides two controlled power outputs with over-voltage and overcurrent protections. The PWM controller regulates the DDR termination voltage (1.25V) or GPU  Voltage(2.05V) with a synchronous-rectified buck converter. The linear controller regulates the Memory Voltage (2.5V). The pre cision reference and voltage-mode PWM control provide ±1% static regulation. The linear controller drives an external N-channel MOSFET to provide adjustable voltage. The APW7045 monitors two output voltages, and a single Power Good signal is issued when the PWM voltage is within ±10% of the DAC setting and the lineat regulator output level is above under-voltage threshold. Additional built-in over-voltage protection for the PWM output uses the lower MOSFET to prevent output voltages above 115% of the DAC setting. The PWM over-current function monitors the output current by using the voltage drop across the upper MOSFET's R_DS(ON), eliminating the need for a current sensing resistor.