APT9M100B

MOSFET N-CH 1000V 9A TO-247

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SeekIC No. : 003432644 Detail

APT9M100B: MOSFET N-CH 1000V 9A TO-247

floor Price/Ceiling Price

US $ 2.04~4.16 / Piece | Get Latest Price
Part Number:
APT9M100B
Mfg:
Supply Ability:
5000

Price Break

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  • 10~100
  • 100~250
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  • Unit Price
  • $4.16
  • $3.74
  • $3.08
  • $2.83
  • $2.58
  • $2.24
  • $2.16
  • $2.08
  • $2.04
  • Processing time
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Upload time: 2024/12/22

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Product Details

Quick Details

Series: POWER MOS 8™ Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV)
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 9A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) @ Vgs: 80nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2605pF @ 25V
Power - Max: 335W Mounting Type: Through Hole
Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 9A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 80nC @ 10V
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 1000V (1kV)
Vgs(th) (Max) @ Id: 5V @ 1mA
Manufacturer: Microsemi Power Products Group
Series: POWER MOS 8™
Supplier Device Package: TO-247 [B]
Power - Max: 335W
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 5A, 10V
Input Capacitance (Ciss) @ Vds: 2605pF @ 25V


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