MOSFET N-CH 1000V 9A TO-247
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Features: • Ultra low RDS(ON)• Low Miller Capacitance• Ultra Low Gate Charge, Qg...
Series: | POWER MOS 8™ | Manufacturer: | Microsemi Power Products Group | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 1000V (1kV) | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 9A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 5A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 5V @ 1mA | Gate Charge (Qg) @ Vgs: | 80nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 2605pF @ 25V | ||
Power - Max: | 335W | Mounting Type: | Through Hole | ||
Package / Case: | TO-247-3 | Supplier Device Package: | TO-247 [B] |