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APT94N65B2C3G

MOSFET N-CH 650V 94A TO-247

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SeekIC No. : 003432641 Detail

APT94N65B2C3G: MOSFET N-CH 650V 94A TO-247

APT94N65B2C3G Data Sheet

floor Price/Ceiling Price

US $ 10.29~17.15 / Piece | Get Latest Price
Part Number:
APT94N65B2C3G
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~5000
  • 5000~10000
  • Unit Price
  • $17.15
  • $15.87
  • $13.51
  • $12.44
  • $11.79
  • $11.15
  • $10.81
  • $10.51
  • $10.29
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: CoolMOS™ Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 650V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 94A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 35 mOhm @ 47A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.9V @ 5.8mA Gate Charge (Qg) @ Vgs: 580nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 13940pF @ 25V
Power - Max: 833W Mounting Type: Through Hole
Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX? [B2]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Packaging: Tube
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25° C: 94A
Manufacturer: Microsemi Power Products Group
Series: CoolMOS™
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX? [B2]
Power - Max: 833W
Rds On (Max) @ Id, Vgs: 35 mOhm @ 47A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.8mA
Gate Charge (Qg) @ Vgs: 580nC @ 10V
Input Capacitance (Ciss) @ Vds: 13940pF @ 25V


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