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APT8075BVFR

Features: • Fast Recovery Body Diode • 100% Avalanche Tested• Lower Leakage • Popular TO-247 Package• Faster SwitchingSpecifications Symbol Parameter APT30M70BVFR UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25°C 12 A...

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SeekIC No. : 004287567 Detail

APT8075BVFR: Features: • Fast Recovery Body Diode • 100% Avalanche Tested• Lower Leakage • Popular TO-247 Package• Faster SwitchingSpecifications Symbol Parameter APT30M70BVF...

APT8075BVFR Data Sheet

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Part Number:
APT8075BVFR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-247 Package
• Faster Switching


Specifications

Symbol Parameter APT30M70BVFR UNIT
VDSS Drain-Source Voltage 800 Volts
ID Continuous Drain Current @ TC = 25°C 12 Amps
IDM Pulsed Drain Current 48
VGS Gate-Source Voltage Continuous ±30 Volts
VGSM Gate-Source Voltage Transient ±40
PD Total Power Dissipation @ TC = 25°C 260 Watts
Linear Derating Factor 2.08 W/°C
TJ ,TSTG Operating and Storage Junction Temperature Range -55 to 150 °C
TL Lead Temperature: 0.063" from Case for 10 Sec 300
IAR Avalanche Current (Repetitive and Non-Repetitive) 12 Amps
EAR Repetitive Avalanche Energy 30 mJ
EAS Single Pulse Avalanche Energy 960



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